4 edition of SiC Power Materials and Devices found in the catalog.
June 15, 2004
Written in English
Springer Series in Materials Science
|The Physical Object|
|Number of Pages||400|
Silicon Carbide (SiC) devices have emerged as the most viable candidate for next-generation, low-loss semiconductors due to its low ON resistance and superior high-temperature, high-frequency, and high-voltage performance when compared to silicon. SiC also allows designers to use fewer components, further reducing design is at the forefront in the . The paper, "PRESiCE: PRocess Engineered for manufacturing SiC Electronic-devices," will be presented at the International Conference on Silicon Carbide and Related Materials, being held Sept.
After completing his doctoral studies, Dr Pushpakaran joined X-FAB Texas, where he is currently a SiC Process Development Engineer responsible for semiconductor fabrication projects aimed towards the commercialization of SiC technology by enabling processing and fabrication of SiC power devices on state-of-the-art 6-inch wafers with the support. Silicon Carbide (SiC) is believed to be a revolutionary semiconductor material for power devices of the future; many SiC power devices have emerged as superior alternative power switch technology, especially in harsh environments with high temperature or high electric field. In this chapter, the challenges and recent developments of SiC power devices are : Yintang Yang, Baoxing Duan, Song Yuan, Hujun Jia.
This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a.
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This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C- 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device.
This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C- 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device Format: Hardcover.
“Students or working professionals interested in SiC technology will find this book worth reading.” (IEEE Electrical Insulation Magazine, 1 November )“If you have any SiC Power Materials and Devices book in the now emerging SiC semiconductor devices, this book covers it all and in sufficient depth to answer questions that might arise from process engineers, device modelers, or power - circuits and.
SiC power MOSFETs entered commercial production inproviding rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers /5(4).
Power SiC Materials, Devices, and Applications by Yole Développement 1. From Technologies to Markets Power SiC Materials, Devices and Applications Market and Technology Report Sample @ 2. 2 Dr.
AnaVillamor Dr Ana Villamor serves as a Technology & Market Analyst | Power Electronics at Yole Développement. Purchase SiC Materials and Devices, Volume 52 - 1st Edition. Print Book & E-Book. ISBN Abstract: Silicon-Carbide (SiC) devices with superior performance over traditional silicon power devices have become the prime candidates for future high-performance power electronics energy conversion.
Traditional device packaging becomes a limiting factor in fully realizing the benefits offered by SiC power devices, and thus, improved and advanced Cited by: The market size for the SiC power devices for each of the applications is estimated in Fig.
The ability to displace silicon IGBTs in these applications is strongly dependent on how quickly the cost of manufacturing the SiC power devices can be scaled down. The cost for manufacturing the SiC power devices is discussed in the next section. Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating.
in a semiconductor materials, can be formed in SiC. These properties make SiC an attractive material from which to manufacture power devices that can far exceed the performance of their Si counterparts.
SiC devices can withstand higher breakdown voltage, have lower resistivity, and can operate at higher Size: KB. This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field.
It describes how gallium nitride has emerged as an excellent material for the fabrication of. Silicon Carbide Electronic Devices: Book Chapter: Encyclopedia of Materials: Science and Technology, Elsevier Science, vol. 9, pp. Deep RIE Process for Silicon Carbide Power Electronics and MEMS: Conference Paper: Workshop on SiC Materials and Devices, Charlottesville, Virginia USA: Electronic Devices, Diodes.
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary.
This book Cited by: This book relates the recent developments in several key electrical engineering RD labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations.
The next section examines silicon carbide and its potentiality for power electronics applications and. "Full SiC" Power Modules ROHM now oﬀers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.
In response to the growing demand for SiC products, ROHM has implemented the world's ﬁrst full-scale. thinner than SiC devices. This feature leads to challenges on the mechanical stability considerations for SiC power module packaging.
Selections of appropriate substrates, die-attachment materials and encapsulation material to match with the thermal expansion coefficient of the SiC devices are the key factors to the success of SiC by: This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices.
Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are.
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Preview this book» What people are saying. This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.
The book should serve as an advanced tutorial and reference for those involved in applying the very latest technology emerging from university.
Silicon Carbide Projects at Warwick Improving SiC epitaxial growth processes. Ultra-high voltage (>30 kV) power devices through superior materials EPSRC Project: EP/P/1 Warwick Team: Vishal Shah (PI), A. Ben Renz. With Dynex Semiconductor and Cambridge Microelectronics • SiC materials focus: developing >30 kV rated materials.
SiC devices have excellent characteristics that realize high blocking voltage, low power dissipation, high-frequency operation and high-temperature operation.
Power semiconductors that make use of SiC achieve significant reduction in energy consumption, and can be used to develop smaller and lighter products.Power devices are a key component in power electronics products for contributing to the realization of a low-carbon society.
Attracting attention as the most energy-efficient power device is one made using new material, silicon-carbide (SiC). The material characteristics of SiC have led to a dramatic reduction in power loss and significant energyFile Size: 2MB.The new materials are therefore very useful.
Initially available SiC devices were simple diodes, but the material technology has improved to allow the production of JFETs, MOSFETs, and bipolar transistors.
SiC vs. GaN Wide-bandgap power devices (Figure 1) are expensive. So the benefit of using them rather than another (cheaper) technology has.